روش کنترل الکتریکی خواص مغناطیسی را برای حافظه اسپینترونیک نسل بعدی تنظیم می کند

Electrical control method tunes magnetic properties for next-generation spintronic memory

A research team led by Professor Jung-Il Hong of the Department of Physics and Chemistry at DGIST has successfully used current pulses to alter the spin configuration within a ferrimagnetic material, lowering its "compensation temperature"—the temperature at which opposing magnetizations cancel each other out—by up to approximately 110 K.